75 μm top-illuminated InGaAs Avalanche Photodiode
FEATURES
- High reliability InGaAs/InP planar APD structure
- 75μm top-illuminated active area
- Low capacitance
- Low dark current
APPLICATIONS
- Optical receivers up to 2.5 Gb/s
ABSOLUTE MAXIMUM RATINGS
| Parameter | Symbol | Rating | Unit |
| Forward current | If | 10 | mA |
| Reverse current | Ir | 2 | mA |
| Operating temperature | Tamb | -40 to +85 | °C |
| Storage temperature | Tstg | -40 to +100 | °C |
ELECTRICAL and OPTICAL CHARACTERISTICS at 25oC
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Responsivity | R | 0.9 | 1.05 | - | A/W |
λ=1550nm, M=1 |
| 0.8 | 0.9 | - | λ=1310nm, M=1 | |||
| Breakdown voltage | Vb | 35 |
45 | 55 | V | Id=10μA
|
| Temperature coefficient of Vb | 0.08 | 0.1 | 0.12 | V/°C | --- | |
| Dark current | Id | – | 15 | 65 | nA | Vr=0.9Vb |
| Cutoff frequency | fc | 1.5 |
3.0 |
- | GHz | M = 10 |
| Capacitance | C | – | 0.54 | 0.65 | pF | f = 1MHz, Vr = 0.9 Vb |
| Maximum multiplication factor | Mmax | 25 | λ = 1310, 1550nm, |
OUTLINE DRAWING
D-TECH PRODUCT LIST
Packaged Products
