55 µm Top-Illuminated InGaAs Avalanche Photodiode
FEATURES
- High reliability InGaAs/InP planar APD structure
- 55µm top-illuminated active area
- Low capacitance
- Low dark current
APPLICATIONS
- Optical receivers up to 2.5 Gb/s
ABSOLUTE MAXIMUM RATINGS
| Parameter | Symbol | Rating | Unit |
| Forward current | If | 10 | mA |
| Reverse current | Ir | 2 | mA |
| Operating temperature | Ta | -40 to +85 | °C |
| Storage temperature | Ts | -40 to +100 | °C |
ELECTRICAL and OPTICAL CHARACTERISTICS
(Ta = -40 °C to +85 °C unless otherwise specified)
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Responsivity | R | 0.8 | 0.9 | - | A/W |
λ = 1310nm, M = 1, 25°C |
| 0.9 | 1.0 | - | λ = 1310nm, M = 1, 25°C | |||
| 0.75 | - | - | λ = 1310nm, M = 1, -40°C to +85°C |
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| 0.85 | - | - | λ = 1550nm, M = 1, -40°C to +85°C |
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| Breakdown voltage | Vb | 35 |
45 | 55 | V | Id = 10µA, 25°C |
| Temperature coefficient of Vb | Γ | 0.08 | 0.1 | 0.12 | V/°C | ΔVb/ΔT |
| Dark current | Id | – | 10 | 50 | nA | M = 10, 25°C |
| - | - | 1000 | M = 10, 85°C | |||
| Cutoff frequency | fc | 2.0 |
3.0 |
- | GHz | M = 10 |
| Capacitance | C | – | 0.38 | 0.5 | pF | f = 1MHz, Vr = 0.9 Vb |
| Maximum multiplication factor | Mmax | 25 | - | - | λ = 1310nm, Ipo = 1µA |
OUTLINE DRAWING
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