55 μm InGaAs PIN Photodiode (AOP550AC)
FEATURES
- Highly reliable planar structure
- 55 μm top-illuminated active area
- Low capacitance
- Low dark current
- High responsivity
APPLICATIONS
- Optical receivers up to 2.5 Gb/s for Gigabit Ethernet,
Fiber Channel and SONET/SDH- Instrumentation
ABSOLUTE MAXIMUM RATINGS
| Parameter | Symbol | Rating | Unit |
| PIN reverse voltage | Vr | 30 | V |
| PIN reverse current | Ir | 2 | mA |
| Operating temperature | Tamb | -40 to +85 | °C |
| Storage temperature | Tstg | -50 to +100 | °C |
ELECTRICAL and OPTICAL CHARACTERISTICS at 25oC
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Wavelength | λ | 1000 | - | 1650 | nm | --- |
| Responsivity | R | 0.9 | 1.1 | - | A/W | λ=1550nm |
| 0.85 | 0.95 | - | λ=1310nm | |||
| Operation voltage | V | 2.5 | - | 20 | V | - |
| Dark current | Id | – | 0.02 | 1 | nA | Vr=5V |
| Cutoff frequency | fc | 2.5 | - | - | GHz | Vr=5V |
| Capacitance | C | – | 0.5 | .65 | pF | Vr=5V, f=1MHz |
OUTLINE DRAWING
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