D-Tech
D-tech product
De-Tech AOP800A 75 μm top-illuminated InGaAs Avalanche Photodiode

FEATURES

  • High reliability InGaAs/InP planar APD structure
  • 75μm top-illuminated active area
  • Low capacitance
  • Low dark current

APPLICATIONS

  • Optical receivers up to 2.5 Gb/s

ABSOLUTE MAXIMUM RATINGS

 Parameter Symbol Rating Unit
 Forward current If 10 mA
 Reverse current Ir 2 mA
 Operating temperature Tamb -40 to +85 °C
 Storage temperature Tstg -40 to +100 °C

 

ELECTRICAL and OPTICAL CHARACTERISTICS at 25oC

 Parameter Symbol Min Typ Max Unit Conditions
 Responsivity R 0.9 1.05 -

A/W

λ=1550nm, M=1
0.8 0.9 - λ=1310nm, M=1
 Breakdown voltage Vb

35

45 55 V

Id=10μA

 

 Temperature coefficient of Vb   0.08 0.1 0.12 V/°C ---
 Dark current

Id 15 65 nA Vr=0.9Vb
 Cutoff frequency

fc

1.5

3.0

GHz M = 10
 Capacitance C 0.54 0.65 pF f = 1MHz, Vr = 0.9 Vb
 Maximum multiplication factor Mmax 25      

λ = 1310, 1550nm,
Ipo = 1µA,
Vr = V at Id = 1µA,


OUTLINE DRAWING

AOP800A chip outline