D-Tech
D-tech product
De-Tech AOP800A 55 µm Top-Illuminated InGaAs Avalanche Photodiode

FEATURES

  • High reliability InGaAs/InP planar APD structure
  • 55µm top-illuminated active area
  • Low capacitance
  • Low dark current

APPLICATIONS

  • Optical receivers up to 2.5 Gb/s

ABSOLUTE MAXIMUM RATINGS

 Parameter Symbol Rating Unit
 Forward current If 10 mA
 Reverse current Ir 2 mA
 Operating temperature Ta -40 to +85 °C
 Storage temperature Ts -40 to +100 °C

 

ELECTRICAL and OPTICAL CHARACTERISTICS
(Ta = -40 °C to +85 °C unless otherwise specified)

 Parameter Symbol Min Typ Max Unit Conditions
 Responsivity R 0.8 0.9 -

A/W

λ = 1310nm, M = 1, 25°C
0.9 1.0 - λ = 1310nm, M = 1, 25°C
0.75 - -

λ = 1310nm, M = 1, -40°C to +85°C

0.85 - -

λ = 1550nm, M = 1, -40°C to +85°C

 Breakdown voltage Vb

35

45 55 V

Id = 10µA, 25°C

 Temperature coefficient of Vb Γ 0.08 0.1 0.12 V/°C ΔVb/ΔT
 Dark current

Id 10 50 nA M = 10, 25°C
- - 1000 M = 10, 85°C
 Cutoff frequency

fc

2.0

3.0

GHz M = 10
 Capacitance C 0.38 0.5 pF f = 1MHz, Vr = 0.9 Vb
 Maximum multiplication factor Mmax 25 - -  

λ = 1310nm, Ipo = 1µA
Vr = V at Id = 1µA, 25°C


OUTLINE DRAWING

AOP800A chip outline